EFC4615R no. a1629-1/7 features ? 2.5v drive ? best suited for lib charging and discharging switch ? common-drain type ? protection diode in ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit source-to-source voltage v sss 24 v gate-to-source voltage v gss 12 v source current (dc) i s 6a source current (pulse) i sp pw 10 s, duty cycle 1% 60 a total dissipation p t when mounted on ceramic substrate (5000mm 2 0.8mm) 1.6 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7067-001 ordering number : ena1629a 91212 tkim/62310pf tkim tc-00002379 sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ EFC4615R n-channel silicon mosfet general-purpose switching device applications product & package information ? package : efcp ? jeita, jedec : - ? minimum packing quantity : 5,000 pcs./reel taping type : tr marking electrical connection 1 4 2 3 rg=200 rg rg fq lot no. tr 1 : source1 2 : gate1 3 : gate2 4 : source2 sanyo : efcp1515-4cc-037 1.46 0.65 0.65 1.46 2 1 3 4 0.22 0.15 0.37 0.3 43 12 EFC4615R-tr
EFC4615R no. a1629-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max source-to-source breakdown voltage v (br)sss i s =1ma, v gs =0v test circuit 1 24 v zero-gate voltage source current i sss v ss = 2 0v, v gs =0v test circuit 1 1 a gate-to-source leakage current i gss v gs =8v, v ss =0v test circuit 2 10 a cutoff voltage v gs (off) v ss =10v, i s =1ma test circuit 3 0.5 1.3 v forward transfer admittance | yfs | v ss =10v, i s = 3 a test circuit 4 5.4 s static source-to-source on-state resistance r ss (on)1 i s =3a, v gs =4.5v test circuit 5 19 27 31 m r ss (on)2 i s =3a, v gs =4.0v test circuit 5 21 28 33 m r ss (on)3 i s =3a, v gs =3.1v test circuit 5 24 33 44 m r ss (on)4 i s =3a, v gs =2.5v test circuit 5 28 39 52 m turn-on delay time t d (on) see speci ed test circuit. test circuit 7 13 ns rise time t r 235 ns turn-off delay time t d (off) 335 ns fall time t f 360 ns total gate charge qg v ss =10v, v gs =4.5v, i s =6a 8.8 nc forward source-to-source voltage v f(s-s) i s =6a, v gs =0v test circuit 6 1 1.2 v ordering information device package shipping memo EFC4615R-tr efcp 5,000pcs./reel pb free and halogen free test circuits are example of measuring fet1 side v sss / i sss i gss (+) / (--) v gs (off) 10v 1ma | y fs | it11565 it11566 it11567 it11568 s2 s1 g2 g1 s2 s1 g2 g1 s2 s1 g2 g1 s2 s1 g2 g1 * note: connect the mesurement terminal reversely if you want to measure the fet2 side. test circuit 1 test circuit 2 test circuit 3 test circuit 4
EFC4615R no. a1629-3/7 * note: connect the mesurement terminal reversely if you want to measure the fet2 side. t d (on), t r , t d (off), t f v in pw=10 s d.c. 1% v dd =10v v out r ss (on) 4.5v v f(s-s) it11569 it11570 s2 s1 g2 g1 s2 s1 g2 g1 s1 s2 g1 g2 test circuit 5 test circuit 7 test circuit 6 i s =3a r l =3.33 qg test circuit 8 it15409 it11571 s2 s1 g2 g1 gate-to-source voltage, v gs -- v static source-to-source on-state resistance, r ss (on) -- m ambient temperature, ta -- c r ss (on) -- ta r ss (on) -- v gs static source-to-source on-state resistance, r ss (on) -- m i s -- v gs source current, i s -- a gate-to-source voltage, v gs -- v source current, i s -- a | y fs | -- i s forward transfer admittance, | y fs | -- s --60 --40 --20 0 20 40 60 80 100 120 140 160 0 10 30 20 50 60 70 40 v gs =2.5v, i s =3a v gs =4.5v, i s =3a v gs =3.1v, i s =3a 0 it15253 0 0.6 0.8 0.2 0.4 1.0 1.4 1.2 1.6 1.5 1.0 0.5 4.0 2.5 2.0 4.5 3.5 3.0 5.0 v ss =10v --25 c ta=75 c 25 c it15255 it15254 ta=25 c i s =3a 06 4 2810 10 20 30 40 60 70 50 80 v gs =4.0v, i s =3a it15256 ta= --25 c 75 c 25 c v ss =10v 2 1.0 7 7 5 3 10 0.1 23 57 57 23 1.0 10
EFC4615R no. a1629-4/7 i s -- v f(s-s) source current, i s -- a forward source-to-source voltage, v f(s-s) -- v sw time -- i s switching time, sw time -- ns source current, i s -- a total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v 0 0.2 0.4 1.2 0.8 1.0 0.6 0.001 0.01 7 5 3 2 2 0.1 1.0 7 5 3 2 7 5 3 2 it15257 --25 c 25 c ta=75 c v gs =0v 10 7 5 3 100 7 7 5 3 10 2 2 1000 7 5 3 0.01 2 0.1 357 2 10 357 it15258 v ss =10v v gs =4.5v t d (off) t r t f 2 1.0 357 t d (on) 0123 5 7 9 46810 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 it15260 v ss =10v i s =6a ambient temperature, ta -- c p t -- ta total dissipation, p t -- w it15535 0 0 20 40 0.4 0.6 60 80 100 120 140 160 1.0 1.6 1.4 0.2 0.8 1.2 1.8 when mounted on ceramic substrate (5000mm 2 0.8mm) a s o source-to-source voltage, v ss -- v source current, i s -- a operation in this area is limited by r ss (on). dc operation 100 s 1ms 10ms 100ms it15534 2 3 5 7 2 0.1 3 5 7 2 1.0 3 2 2 3 5 5 7 7 10 100 0.01 0.1 0.01 57 23 2 57 23 3 2 57 3 1.0 10 5 i sp =60a (pw 10 s) i s =6a ta=25 c single pulse when mounted on ceramic substrate (5000mm 2 0.8mm)
EFC4615R no. a1629-5/7 taping speci cation EFC4615R-tr
EFC4615R no. a1629-6/7 outline drawing land pattern example EFC4615R-tr mass (g) unit 0.0013 * for reference mm unit: mm 0.65 0.65 0.3
EFC4615R ps no. a1629-7/7 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. note on usage : since the EFC4615R is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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